| 摘要 |
An attenuated phase shift mask (10 or 20) includes a substrate (12 or 22) and an attenuation stack (11 or 21) overlying the substrate. The attenuation stack includes a chromium layer or ruthenium layer (14 or 24) overlying the substrate, a tantalum silicon oxide layer (16 or 26) overlying the chromium layer or the ruthenium layer, and a tantalum silicon nitride layer (18 or 28) overlying the tantalum silicon oxide layer. The attenuation stack may also include a layer (30) between the substrate (22) and the chromium or ruthenium layer (24). In one embodiment, this layer is a portion of the substrate. The attenuation stack is used to pattern photoresist (50) on a semiconductor wafer. In one embodiment, portions of the substrate adjacent the attenuation stack has a transmission of greater than 90 percent and the attenuation stack has a transmission of 5 to 20 percent at the exposure wavelength. In one embodiment, an inspection contrast between the substrate and the attenuation stack at an inspection wavelength is greater than 75 percent. |
