| 摘要 |
Methods for reducing quick charge loss effects, methods for programming, memory devices, and memory systems are disclosed. In one such method, a programming pulse is applied to the word line to increase the threshold voltage of the memory cells being programmed. A negative voltage pulse is applied to the word line after the programming pulse to force any electrons trapped in the tunnel oxide of memory cells being programmed back into the tunnel region. After the negative pulse, a program verify operation is performed.
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