发明名称 |
Through-silicon via structures including conductive protective layers |
摘要 |
Through-Silicon-Via (TSV) structures can include a conductive via through a substrate extending from an upper surface of the substrate to a backside surface of the substrate opposite the upper surface, a conductive protective layer including Ni and/or Co can be at a bottom of the conductive via, and a separate polymer insulating layer can be on the backside surface of the substrate in contact with the conductive protective layer.
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申请公布号 |
US8026592(B2) |
申请公布日期 |
2011.09.27 |
申请号 |
US20090408369 |
申请日期 |
2009.03.20 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
YOON MINSEUNG;KIM NAMSEOG;KIM PYOUNGWAN;MA KEUMHEE;JO CHAJEA |
分类号 |
H01L23/04 |
主分类号 |
H01L23/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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