发明名称 |
Method of forming silicon oxide film and method of production of semiconductor memory device using this method |
摘要 |
To form a good quality silicon oxide film provided with both a superior Qbd characteristic and Rd characteristic, a wafer W is loaded into a plasma treatment apparatus where the surface of a silicon layer 501 of the wafer W is treated by plasma oxidation to form on the silicon layer 501 to a film thickness T1 a silicon oxide film 503. Next, the wafer W on which the silicon oxide film 503 is formed is transferred to a thermal oxidation treatment apparatus where the silicon oxide film 503 is treated by thermal oxidation to thereby form a silicon oxide film 505 having a target film thickness T2.
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申请公布号 |
US8026187(B2) |
申请公布日期 |
2011.09.27 |
申请号 |
US20090550788 |
申请日期 |
2009.08.31 |
申请人 |
TOKYO ELECTRON LIMITED;UNIVERSITY OF TSUKUBA |
发明人 |
KABE YOSHIRO;KITAGAWA JUNICHI;YAMABE KIKUO |
分类号 |
H01L21/00;H01L21/76 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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