发明名称 hydrogen sensor and manufacturing method thereof
摘要 The present invention relates to a hydrogen sensor and to a method for fabricating the hydrogen sensor. According to the method, a thin film made of a transition metal or transition metal alloy is disposed on a surface of a substrate made of an elastic material, and then tensile force is applied to the substrate to form a nanogap in the thin film. The hydrogen sensor detects hydrogen through the nanogap. The method uses a simpler process than typical methods for fabricating hydrogen sensors such as a semiconductor-type method, a catalytic-combustion-type method, a field effect transistor (FET)-type method, an electrolyte-type (electrochemical) method, an optical-fiber-type method, a piezoelectric-type method, and a thermoelectric-type method. The disclosed hydrogen sensor is smaller, more economical, and more convenient than commercialized hydrogen sensors such as a catalytic-combustion-type hydrogen sensor, a combination hydrogen sensor of a palladium (Pd) alloy and a thermal plate, a solid phase hydrogen sensor of a Pd/Ag alloy, and a Pd gate FET hydrogen sensor. As only tensile force is briefly applied to the substrate to form a uniformly shaped nanogap in the thin film of a transition metal or of a transition metal alloy on the substrate, a high-performance hydrogen sensor can be fabricated at an extremely low cost.
申请公布号 KR101067557(B1) 申请公布日期 2011.09.27
申请号 KR20090132402 申请日期 2009.12.29
申请人 发明人
分类号 G01N27/12;H01L21/02 主分类号 G01N27/12
代理机构 代理人
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