发明名称 |
Thin-film resistor with a layer structure and method for manufacturing a thin-film resistor with a layer structure |
摘要 |
A thin-film resistor with a layer structure with a Ti layer and a TiN layer is described, wherein a layer thickness of the Ti layer and a layer thickness of the TiN layer are selected such that a resulting temperature coefficient of resistance (TCR) is smaller than 1000 ppm/° C.
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申请公布号 |
US8026788(B2) |
申请公布日期 |
2011.09.27 |
申请号 |
US20080095756 |
申请日期 |
2008.10.30 |
申请人 |
FRAUNHOFER—GESELLSCHAFT ZUR FOERDERUNG DER ANGEWANDTEN FORSCHUNG E.V.;UNIVERSITAET DUISBURG—ESSEN FORSTHAUSWEG |
发明人 |
DEITERS HEINZ;LINNENBERG SUSANNE;NACHRODT DIRK;PASCHEN UWE;VOGT HOLGER |
分类号 |
H01C1/012 |
主分类号 |
H01C1/012 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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