method for forming a gate electrode of semiconductor device,申请号KR20040022833-传众专利搜索

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发明名称	method for forming a gate electrode of semiconductor device
摘要
申请公布号	KR101068136(B1)	申请公布日期	2011.09.27
申请号	KR20040022833	申请日期	2004.04.02
申请人		发明人
分类号	H01L21/336	主分类号	H01L21/336
代理机构		代理人
主权项
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