| 摘要 |
The invention relates to means of micro-electronics. Method for determination of thermal resistance of a crystal of a sub-micron transistor with gate in form of a pan in which one determines dimensions and shape of a figure of thermal equivalent, heights of breaks of the side surface of thermal equivalent, value of geometric equivalent of thermal resistance of the crystal by output parameters of transistors, value of dimension-less equivalent of thermal resistance of the crystal and by those characteristics one determines thermal resistance of the crystal of sub-micron transistor. The invention can be used at development and design of sub-micron transistors, at determination of temperature of transistor. The invention increases effectiveness of determination of thermal resistance of the crystal of sub-micron transistor. |
