| 摘要 |
PROBLEM TO BE SOLVED: To provide a group III nitride semiconductor laser to provide a low threshold by utilizing a semipolar surface. SOLUTION: A principal surface 13a of a semiconductor substrate 13 is inclined along an a-axis direction of GaN, at an angle A<SB>OFF</SB>of not smaller than 50°and not larger than 70°against a reference surface orthogonal to a reference axis Cx in a c-axis direction of GaN. A first clad layer 15, an active layer 17, and a second clad layer 19 are mounted on the principal surface 13a of the semiconductor substrate 13. A well layer 23a of the active layer 17 includes InGaN. The degree P of polarization in an LED mode of emission from the active layer before the semiconductor laser reaches laser oscillation is not lower than -1 and not higher than 0.1. The degree P of polarization of the group III nitride semiconductor laser is prescribed by P=(I1-I2)/(I1+I2), where I1 is an electric field component in an X1 direction and I2 is an electric field component in an X2 direction of light in the LED mode. COPYRIGHT: (C)2011,JPO&INPIT
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