发明名称 |
SEMICONDUCTOR DEVICE |
摘要 |
The present invention enhances voltage conversion efficiency of a semiconductor device. In a non-isolated DC-DC converter that includes a high-side switch power MOSFET and a low-side switch power MOSFET, which are series-connected, the high-side switch power MOSFET and driver circuits for driving the high-side and low-side switch power MOSFETs are formed within one semiconductor chip, whereas the low-side switch power MOSFET is formed in another semiconductor chip. The two semiconductor chips are sealed in a single package.
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申请公布号 |
US2011227169(A1) |
申请公布日期 |
2011.09.22 |
申请号 |
US201113151952 |
申请日期 |
2011.06.02 |
申请人 |
RENESAS ELECTRONICS CORPORATION |
发明人 |
UNO TOMOAKI;SHIRAISHI MASAKI;MATSUURA NOBUYOSHI;SATOU YUKIHIRO |
分类号 |
H01L27/04;H01L27/088;G06F1/26;H01L21/822;H01L25/07;H01L25/16;H01L25/18;H01L29/76;H01L29/78;H02M3/155;H02M3/158;H03K17/687 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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