发明名称 SEMICONDUCTOR DEVICE
摘要 The present invention enhances voltage conversion efficiency of a semiconductor device. In a non-isolated DC-DC converter that includes a high-side switch power MOSFET and a low-side switch power MOSFET, which are series-connected, the high-side switch power MOSFET and driver circuits for driving the high-side and low-side switch power MOSFETs are formed within one semiconductor chip, whereas the low-side switch power MOSFET is formed in another semiconductor chip. The two semiconductor chips are sealed in a single package.
申请公布号 US2011227169(A1) 申请公布日期 2011.09.22
申请号 US201113151952 申请日期 2011.06.02
申请人 RENESAS ELECTRONICS CORPORATION 发明人 UNO TOMOAKI;SHIRAISHI MASAKI;MATSUURA NOBUYOSHI;SATOU YUKIHIRO
分类号 H01L27/04;H01L27/088;G06F1/26;H01L21/822;H01L25/07;H01L25/16;H01L25/18;H01L29/76;H01L29/78;H02M3/155;H02M3/158;H03K17/687 主分类号 H01L27/04
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