| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for radiation monitoring that obtains real time information concerning the amount of radiation. <P>SOLUTION: A semiconductor device includes: a semiconductor substrate; a buried insulator layer disposed on the semiconductor substrate, the buried insulator layer configured to retain an amount of charge in a plurality of charge traps in response to a radiation exposure by the semiconductor device; a semiconductor layer disposed on the buried insulating layer; a second insulator layer disposed on the semiconductor layer; a gate conducting layer disposed on the second insulator layer; and one or more side contacts electrically connected to the semiconductor layer. The method for radiation monitoring includes: applying a backgate voltage to a radiation monitor, the radiation monitor comprising a field effect transistor (FET); exposing the radiation monitor to radiation; determining a change in a threshold voltage of the radiation monitor; and determining an amount of radiation exposure based on the change in threshold voltage. <P>COPYRIGHT: (C)2011,JPO&INPIT |
