| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a photoelectric conversion element which shows high external quantum efficiency, has a low dark current value, suppresses deterioration in the external quantum efficiency when the element is subjected to heat treatment, reduces an increase of the dark current and is excellent in heat resistance, and to provide an image pickup element equipped with such the photoelectric conversion element. <P>SOLUTION: The photoelectric conversion element includes: a conductive thin film; an organic photoelectric conversion film; a blocking layer; and a transparent conductive layer. The organic photoelectric conversion film contains a p-type organic photoelectric conversion material having a glass transition point (Tg) of ≥100°C and forming an amorphous layer, and the blocking layer contains a blocking material having a Tg of ≥140°C. <P>COPYRIGHT: (C)2011,JPO&INPIT |
