METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING DEVICE

摘要

PROBLEM TO BE SOLVED: To improve the performance of a semiconductor device by inhibiting the mixture of hydrogen into an oxide film formed on an exposed surface of a silicon-containing film, a dielectric film that has been already deposited on a substrate and the like. SOLUTION: A semiconductor device manufacturing method includes: a reduction process of supplying a reducing gas with a larger particle in molecular size than that of a hydrogen gas into a processing chamber and supplying a reducing gas plasma that is generated by plasma-discharging the reducing gas supplied into the processing chamber to the surface of the substrate; and an oxidization process of supplying an oxidizing gas into the processing chamber and supplying an oxidizing gas plasma that is generated by plasma-discharging the oxidizing gas supplied into the processing chamber to the surface of the substrate. COPYRIGHT: (C)2011,JPO&INPIT