NGO SUBSTRATE, MANUFACTURING METHOD OF NITRIDE-BASED COMPOUND SEMICONDUCTOR SUBSTRATE, NITRIDE BASED-COMPOUND SEMICONDUCTOR SUBSTRATE, AND NITRIDE-BASED COMPOUND SEMICONDUCTOR SELF-SUPPORTING SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To provide a manufacturing method of a nitride-based compound semiconductor substrate for eliminating a growth process of a low-temperature protective layer for reducing the manufacturing cost of a GaN-based semiconductor substrate and removing influence due to variations in the quality of the low-temperature protecting layer. SOLUTION: The nitride-based compound semiconductor layer is epitaxially grown on a growth substrate whose average surface roughness is controlled to 0.2 to 10 nm. The growth substrate is supplied to an epitaxial growth device and annealing processing is performed so that the average surface roughness of the growth substrate becomes 0.2 to 10 nm, for example. COPYRIGHT: (C)2011,JPO&INPIT