POWER MOS TRANSISTOR DEVICE AND SWITCH APPARATUS COMPRISING THE SAME

摘要

A transistor power switch device comprising an array of vertical transistor elements for carrying current between the first and second faces of a semiconductor body and a vertical avalanche diode electrically in parallel with the array of vertical transistors. The array of transistor elements includes at the first face an array of source regions of a first semiconductor type, at least one p region of a second semiconductor type opposite to the first type interposed between the source regions and the second face, at least one control electrode for switchably controlling flow of the current through the p region, and a conductive layer contacting the source regions and insulated from the control electrode. The vertical avalanche diode is configured to conduct breakdown current between the first and second faces in the off state of the device and having a first current carrying diode region of the second semiconductor type in contact with the first face and with the conductive layer and a second semiconductor region of the first semiconductor type electrically connected with the second face.