发明名称 SEMICONDUCTOR DEVICE AND STANDARD CELL
摘要 According to the embodiments, standard cells are arranged in an array in a semiconductor device. In the standard cell, a first diffusion area with a plurality of transistors formed in a main surface region of a semiconductor substrate is formed in a region sandwiched between two power supply lines arranged on the semiconductor substrate. Further, the standard cell includes a potential supplying unit. The potential supplying unit is formed in the main surface region of the semiconductor substrate by a diffusion layer of the same conductive type as that of the first diffusion area and is electrically connected directly to the diffusion area through a contact from the lower portion of the power supply line, to supply a potential from the power supply line to the first diffusion area.
申请公布号 US2011227133(A1) 申请公布日期 2011.09.22
申请号 US20100883667 申请日期 2010.09.16
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 MORIMOTO TOSHIKI
分类号 H01L27/08;H01L29/06 主分类号 H01L27/08
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