| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a high-output semiconductor laser device which is highly reliable and is superior in heat dissipation. <P>SOLUTION: The semiconductor laser device includes an active layer, a p-type semiconductor layer on the active layer, a pair of trenches formed by digging the p-type semiconductor layer, a ridge-shaped stripe which is formed in the p-type semiconductor layer and is sandwiched between the pair of trenches, and an embedding layer made of an insulating material in which the trenches are embedded. The trenches get shallower as they go away from the stripe. <P>COPYRIGHT: (C)2011,JPO&INPIT |
