发明名称 |
POWER STORAGE DEVICE, MANUFACTURING METHOD THEREOF, SECONDARY BATTERY, AND CAPACITOR |
摘要 |
<P>PROBLEM TO BE SOLVED: To obtain a negative electrode active material layer of which the capacity is large, and to obtain a power storage device which is suppressed in a preparation process and preparation cost. <P>SOLUTION: The power storage device has a negative electrode in which on the surface of a current collector containing a catalyst element to promote crystallization of amorphous silicon, a crystalline silicon film is formed as a negative electrode active material. The crystalline silicon film contains a catalyst element which has lower concentration as the location approaches a surface layer part in distribution in the depth direction of the crystalline silicon film. A preparation method of the power storage device is provided in which, on the current collector containing the catalyst element to promote the crystallization of amorphous silicon, an amorphous silicon film is formed, and by heating the current collector and the amorphous silicon film, the amorphous silicon film is crystallized to form the crystalline silicon film. <P>COPYRIGHT: (C)2011,JPO&INPIT |
申请公布号 |
JP2011187242(A) |
申请公布日期 |
2011.09.22 |
申请号 |
JP20100049746 |
申请日期 |
2010.03.05 |
申请人 |
SEMICONDUCTOR ENERGY LAB CO LTD |
发明人 |
YAMAZAKI SHUNPEI;MORIWAKA YOSHIE;KURISHIRO KAZUKI;YUGAWA MIKIO |
分类号 |
H01M4/134;H01G9/00;H01G11/22;H01G11/24;H01G11/30;H01G11/54;H01G11/68;H01G11/84;H01G11/86;H01M4/1395;H01M4/38;H01M4/485;H01M4/58;H01M4/66 |
主分类号 |
H01M4/134 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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