| 摘要 |
PROBLEM TO BE SOLVED: To provide a technology for growing a thick single-crystal layer on a semiconductor wafer without growing a crystal layer in an angulated shape on an end surface of the semiconductor wafer. SOLUTION: A method of manufacturing an epitaxial wafer having the single-crystal layer 30 formed on the semiconductor wafer 10 includes an amorphous layer forming process of forming an amorphous layer 20 on the end surface 16 of the semiconductor wafer 10 having a flat upper surface 12, a flat lower surface 14, and the end surface 16 connecting the upper surface 12 and lower source 14, and a single-crystal layer forming process of vapor-phase growing the single-crystal layer 30 having a thickness of≥80μm on the upper surface 12 of the semiconductor wafer 10 after the amorphous layer forming process. COPYRIGHT: (C)2011,JPO&INPIT |
