| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which, even if source and drain electrodes and an impurity layer are out of alignment with a channel protection layer, suppresses a variation in on-current characteristic, to provide a manufacturing method thereof, and also to provide a light emitting device having a good image quality that improves an yield of a product, and an electronic apparatus with the light emitting device mounted thereon. SOLUTION: The semiconductor device includes: the channel protection layer 15 provided on a semiconductor layer 14 of a thin-film transistor TFT; and a carbon insulation film 16 provided between the source and drain electrodes 18 and an impurity semiconductor layer 17. The semiconductor layer 14 is formed of microcrystalline silicon crystallized by, for example, laser annealing process of amorphous silicon. The carbon insulation film 16 is a photothermal conversion layer applied in the laser annealing process, and is a left-over part of the photothermal conversion layer. COPYRIGHT: (C)2011,JPO&INPIT
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