| 摘要 |
PROBLEM TO BE SOLVED: To provide a compact and high-performance semiconductor device. SOLUTION: The semiconductor device includes a first GaAs layer 11; a second GaAs layer 12 in a quadrangular pyramid shape formed, while a horizontal direction is a longitudinal direction to the GaAs layer 11; an AlGaAs layer 13, formed on surfaces of the first and second GaAs layers 11, 12; a drain pad 14 formed on a back of the first GaAs layer 11; a strip of source pad 16, formed on a front of the AlGaAs layer 13 on the second GaAs layer 12; and a strip of gate pad 15, formed at both the sides of the second GaAs layer 12 on the AlGaAs layer 13 on the first GaAs layer 11. The first GaAs layer 11 is formed thicker than a portion that excludes a region (gate region 18) where a gate pad 15 is formed at both the sides in the second GaAs layer 12. COPYRIGHT: (C)2011,JPO&INPIT
|
