| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a photosensitive resin composition capable of forming a fine pattern by photolithography and forming an insulating film without performing heat treatment at >200°C and having no problem that a carrier is trapped and the degree of charge transfer is reduced when used as a gate insulating film of an organic thin film transistor. <P>SOLUTION: The photosensitive resin composition contains a polysiloxane compound having a unit represented by general formulae (1) to (4) and a photo radical generator. In the formula (1), R<SP>1</SP>denotes a hydrogen atom or a methyl group and R<SP>2</SP>denotes a 1-5C alkylene group which may have a substituted alkyl group. In the formula (2), R<SP>3</SP>denotes a hydrogen atom or a 1-4C alkyl group. In the formula (3), R<SP>4</SP>denotes a 1-6C alkyl group or a 5 or 6C cycloalkyl group. In the formula (4), R<SP>5</SP>denotes a hydrogen atom or a 1-4C alkyl group. <P>COPYRIGHT: (C)2011,JPO&INPIT |
