发明名称 PLASMA PROCESSING APPARATUS
摘要 An intensity distribution of an electric field of a high frequency power used for generating plasma is controlled by using an electrode made of a homogeneous material and a moving body. There is provided a plasma processing apparatus for introducing a processing gas into an evacuable processing chamber 100 and generating plasma by a high frequency power and performing a plasma process on a wafer W by the plasma. The plasma processing apparatus includes a dielectric base 105a having a multiple number of fine holes A; a varying member 200 as the moving body provided with a multiple number of rod-shaped members B capable of being inserted into and separated from the fine holes A; and a driving mechanism 215 configured to drive the varying member 200 to allow the rod-shaped members B to be inserted into and separated from the fine holes A.
申请公布号 US2011226421(A1) 申请公布日期 2011.09.22
申请号 US201113046925 申请日期 2011.03.14
申请人 TOKYO ELECTRON LIMITED 发明人 HAYASHI DAISUKE
分类号 H01L21/3065;C23C16/50 主分类号 H01L21/3065
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