发明名称 |
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF |
摘要 |
It is an object to provide a thin film transistor having favorable electric characteristics and high reliability and a semiconductor device which includes the thin film transistor as a switching element. An In—Ga—Zn—O-based film having an incubation state that shows an electron diffraction pattern, which is different from a conventionally known amorphous state where a halo shape pattern appears and from a conventionally known crystal state where a spot appears clearly, is formed. The In—Ga—Zn—O-based film having an incubation state is used for a channel formation region of a channel etched thin film transistor. |
申请公布号 |
US2011227060(A1) |
申请公布日期 |
2011.09.22 |
申请号 |
US20100887674 |
申请日期 |
2010.09.22 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
MIYANAGA AKIHARU;SAKATA JUNICHIRO;SAKAKURA MASAYUKI;YAMAZAKI SHUNPEI |
分类号 |
H01L29/786 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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