| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method for a semiconductor light emitting device high in production efficiency. <P>SOLUTION: (A) A growth substrate is prepared. (B) A semiconductor film including, from the growth substrate side, a first conductivity type first semiconductor layer, an active layer, and a second conductivity type second semiconductor layer respectively constituted of Al<SB>x</SB>In<SB>y</SB>Ga<SB>z</SB>N (0≤x≤1, 0≤y≤1, 0≤ z≤1, x+y+z=1) on the growth substrate is formed. (C) A support is prepared. (D) A metal layer is formed on the semiconductor film and/or the support to join the semiconductor film with the support via the metal layer. (E) An outer peripheral part of the growth substrate is irradiated with laser beams to peel the growth substrate and the semiconductor film on the outer peripheral part. (F) The growth substrate is peeled off the semiconductor film with laser beam irradiation while providing a not-irradiated region which is not irradiated with the laser beams in an inner region of the outer peripheral part of the growth substrate. (G) A part of the semiconductor film with the growth substrate peeled off is removed to partition a region where a semiconductor light emitting device is formed. <P>COPYRIGHT: (C)2011,JPO&INPIT |
