发明名称 PLASMA PROCESSING DEVICE AND METHOD
摘要 <P>PROBLEM TO BE SOLVED: To provide a plasma processing device and a plasma processing method that assure stable electrostatic adsorption and prevent abnormal discharge resulting from increased plasma potential, using dipole-type J-R electrodes. <P>SOLUTION: In the plasma processing device having an electrostatic adsorption apparatus 2, that is provided with dipole-type J-R electrodes (inner side adsorption electrode 15; outer side adsorption electrode 16); a leakage current detecting meter 30 detects the leakage currents flowing from the inner side adsorption electrode 15 and the outer side adsorption electrode 16; and a control section 31 controls the voltage applied to the inner side adsorption electrode 15 and the outer side adsorption electrode 16, such that a difference of the detected leakage currents lies within a predetermined range. <P>COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2011187881(A) 申请公布日期 2011.09.22
申请号 JP20100054408 申请日期 2010.03.11
申请人 HITACHI HIGH-TECHNOLOGIES CORP 发明人 KIN MASATOSHI;ISHIMURA HIROAKI;SAKAGUCHI MASAMICHI;FURUBAYASHI HITOSHI
分类号 H01L21/3065;H01L21/683;H05H1/46 主分类号 H01L21/3065
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