发明名称 |
PLASMA PROCESSING DEVICE AND METHOD |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a plasma processing device and a plasma processing method that assure stable electrostatic adsorption and prevent abnormal discharge resulting from increased plasma potential, using dipole-type J-R electrodes. <P>SOLUTION: In the plasma processing device having an electrostatic adsorption apparatus 2, that is provided with dipole-type J-R electrodes (inner side adsorption electrode 15; outer side adsorption electrode 16); a leakage current detecting meter 30 detects the leakage currents flowing from the inner side adsorption electrode 15 and the outer side adsorption electrode 16; and a control section 31 controls the voltage applied to the inner side adsorption electrode 15 and the outer side adsorption electrode 16, such that a difference of the detected leakage currents lies within a predetermined range. <P>COPYRIGHT: (C)2011,JPO&INPIT |
申请公布号 |
JP2011187881(A) |
申请公布日期 |
2011.09.22 |
申请号 |
JP20100054408 |
申请日期 |
2010.03.11 |
申请人 |
HITACHI HIGH-TECHNOLOGIES CORP |
发明人 |
KIN MASATOSHI;ISHIMURA HIROAKI;SAKAGUCHI MASAMICHI;FURUBAYASHI HITOSHI |
分类号 |
H01L21/3065;H01L21/683;H05H1/46 |
主分类号 |
H01L21/3065 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|