SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To easily electrically divide a semiconductor integrated circuit into small regions.

SOLUTION: A semiconductor integrated circuit 2 is formed on a surface of a compound semiconductor substrate 1 such as an InP substrate and a GaAs substrate with a thickness of approximately 150-600μm. A plurality of cut grooves 3 intersecting at the right angle are formed on the rear face (surface opposite to a surface where the semiconductor integrated circuit 2 is formed) of the compound semiconductor substrate 1. A distance from the surface of the semiconductor integrated circuit 2 to the bottom of the cut groove 3 is 50-150μm. Metal 4 such as Au is filled in the cut grooves 3. The metal 4 is also provided entirely on the rear face of the compound semiconductor substrate 1.

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