发明名称 PLASMA PROCESSING APPARATUS
摘要 <p>Disclosed is a plasma processing apparatus which performs plasma processing under substantially atmospheric pressure to a non-planar subject to be processed. In the plasma processing apparatus, a pair of conductive wires are disposed at an interval of 1 mm or less on a dielectric board that conforms with the shape of the subject, the conductive wires are covered with a dielectric thin film having a thickness of 1 mm or less by, for instance, thermally spraying a dielectric material over the conductive wires, and plasma is generated along the shape of the subject by applying high-frequency power to the pair of conductive wires.</p>
申请公布号 WO2011114793(A1) 申请公布日期 2011.09.22
申请号 WO2011JP52344 申请日期 2011.02.04
申请人 HITACHI, LTD.;KOBAYASHI, HIROYUKI;MAEDA, KENJI;TANDOU, TAKUMI;NAKASHIMA, SHOICHI;OHNO, SHIGERU 发明人 KOBAYASHI, HIROYUKI;MAEDA, KENJI;TANDOU, TAKUMI;NAKASHIMA, SHOICHI;OHNO, SHIGERU
分类号 B01J19/00;B08B7/00;C23C16/505;H01L21/205;H01L21/304;H01L21/3065;H05H1/24 主分类号 B01J19/00
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