| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device capable of uniformly forming a pattern at the internal portion of a cell array and at its end. SOLUTION: The manufacturing method of the semiconductor device comprises steps for: forming an etching-objective layer on a substrate with a first region and a second region defined thereon; forming a first photosensitive-film pattern having a first opening on the etching-objective layer; forming a light-shielding film on the surface of the first photosensitive-film pattern; simultaneously exposing the first and the second regions to form a second photosensitive-film pattern having a plurality of second openings on the first photosensitive-film pattern with the light-shielding film formed thereon; and etching the etching-objective layer to form a plurality of patterns by utilizing the first and the second photosensitive-film patterns as etching barriers. COPYRIGHT: (C)2011,JPO&INPIT |
