| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element that has improved luminance characteristics, a lighting device using the same, and a method of manufacturing the semiconductor light emitting element. <P>SOLUTION: The semiconductor light emitting element includes a compound semiconductor layer, a metal electrode layer formed thereupon and having a plurality of openings, and a specified light extraction layer formed further thereupon. The metal electrode layer has the openings of specified size. Further, the light extraction layer is 20 to 70 nm thick to cover the metal electrode layer, or has an uneven structure formed on a surface, a height from a surface of the metal electrode layer to a top of a projection portion being 200 to 700 nm. <P>COPYRIGHT: (C)2011,JPO&INPIT |
