| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element which improves the light emitting property, and the method of manufacturing the semiconductor light emitting element. <P>SOLUTION: A semiconductor laser 30 includes an n-type clad layer 2 comprising AlGaN, an n-type intermediate layer 3 comprising In<SB>s</SB>Ga<SB>1-s</SB>N (0≤s<1) formed on the n-type clad layer 2, an n-type buffer layer 4 comprising In<SB>t</SB>Ga<SB>1-t</SB>N (0≤t<0.5) formed on the n-type intermediate layer 3, and a quantum well light emitting layer 5 comprising InGaN formed on the n-type buffer layer 4. The quantum well light emitting layer 5 includes a well layer comprising In<SB>u</SB>Ga<SB>1-u</SB>N (0<u<0.5) having a relatively high In concentration, and a barrier layer In<SB>v</SB>Ga<SB>1-v</SB>N (0≤v<u) having a relatively low In concentration. The In concentration of the n-buffer layer 4 is higher than that of the n-type intermediate layer 3, and the In concentration of the well layer 5b is higher than that of n-type buffer layer 4. <P>COPYRIGHT: (C)2011,JPO&INPIT |
