| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a compound semiconductor device in which a semiconductor/metal interface of proper quality without residues can be obtained in any region which forms a source electrode, a drain electrode and a gate electrode. <P>SOLUTION: A method of manufacturing a compound semiconductor device includes the steps of forming a compound semiconductor laminated structure 4 on a substrate 1; forming metal films 5A to 5C on the compound semiconductor laminated structure; forming a source electrode 7 and a drain electrode 8 on the metal films: oxidizing or nitriding a part of the metal films and forming a metal oxide film or a metal nitride film 5CX; and forming a gate electrode 9 on the metal oxide film or the metal nitride film. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
