| 摘要 |
PROBLEM TO BE SOLVED: To provide a switching element capable of performing a switching operation by using a semiconductor device alone, without having a negative power supply. SOLUTION: A semiconductor device is provided in which a normally-on type FET; a capacitor having one electrode electrically connected to a gate of the FET and the other electrode electrically connected to an input terminal, and a diode having an anode electrode electrically connected to the gate of the FET, and a cathode electrode electrically connected to a source of the FET are formed on the same chip on which the FET is formed. Also, the capacitor, preferably, has a structure in which an insulating film, such as, a dielectric substance is formed on a gate drawn electrode of the FET, and a metallic layer is formed on the insulation layer. COPYRIGHT: (C)2011,JPO&INPIT
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