发明名称 METHOD OF MANUFACTURING QUANTUM DOT
摘要 A method of manufacturing a quantum dot, the method including: mixing of a Group II precursor and a Group III precursor in a solvent to prepare a first mixture; heating the first mixture at a temperature of about 200° C. to about 350° C.; adding a Group V precursor and a Group VI precursor to the first mixture while maintaining the first mixture at the temperature of about 200° C. to about 350° C. to prepare a second mixture; and maintaining the second mixture at the temperature of about 200° C. to about 350° C. to form a quantum dot.
申请公布号 US2011227007(A1) 申请公布日期 2011.09.22
申请号 US20100907743 申请日期 2010.10.19
申请人 SAMSUNG ELECTRONICS CO., LTD.;SNU R&DB FOUNDATION 发明人 KANG JONG HYUK;SHIN JUNGHAN;PARK JAE BYUNG;LEE DONG-HOON;NAM MINKI;CHAR KOOKHEON;LEE SEONGHOON;BAE WANKI;LIM JAEHOON;JUNG JOOHYUN
分类号 H01B1/02;H01B1/06 主分类号 H01B1/02
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