发明名称 |
METHOD OF MANUFACTURING QUANTUM DOT |
摘要 |
A method of manufacturing a quantum dot, the method including: mixing of a Group II precursor and a Group III precursor in a solvent to prepare a first mixture; heating the first mixture at a temperature of about 200° C. to about 350° C.; adding a Group V precursor and a Group VI precursor to the first mixture while maintaining the first mixture at the temperature of about 200° C. to about 350° C. to prepare a second mixture; and maintaining the second mixture at the temperature of about 200° C. to about 350° C. to form a quantum dot.
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申请公布号 |
US2011227007(A1) |
申请公布日期 |
2011.09.22 |
申请号 |
US20100907743 |
申请日期 |
2010.10.19 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD.;SNU R&DB FOUNDATION |
发明人 |
KANG JONG HYUK;SHIN JUNGHAN;PARK JAE BYUNG;LEE DONG-HOON;NAM MINKI;CHAR KOOKHEON;LEE SEONGHOON;BAE WANKI;LIM JAEHOON;JUNG JOOHYUN |
分类号 |
H01B1/02;H01B1/06 |
主分类号 |
H01B1/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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