| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide photoresists that comprise adhesion promotion component including an Si-containing group and that are particularly useful for ion implant lithography applications. <P>SOLUTION: The photoresists contain the adhesion promotion component including the Si containing group, exhibit good resolution and adhesion to underlying inorganic surfaces such as SiON, silicon oxide, silicon nitride and other inorganic surfaces, and particularly useful for the ion lithography applications and are useful for sub 300 nm, sub 200 nm, and a short wavelength image formation such as 248 nm, 193 nm, and EUV. <P>COPYRIGHT: (C)2011,JPO&INPIT |
