LED FABRICATION VIA ION IMPLANT ISOLATION

摘要

PROBLEM TO BE SOLVED: To provide an electrically isolated light emitting diode.

SOLUTION: A semiconductor light emitting diode includes: a semiconductor substrate 51; an epitaxial layer 52 of n-type Group-III nitride on the substrate; a p-type epitaxial layer 53 of Group-III nitride on the n-type epitaxial layer and forming a p-n junction with the n-type epitaxial layer; and a resistive gallium nitride region 54 on the n-type epitaxial layer and adjacent to the p-type epitaxial layer, for electrically isolating part of the p-n junction 58. A metal contact layer 55 is formed on the p-type epitaxial layer. In method embodiments disclosed, a resistive gallium nitride border is formed by forming an implant mask on the p-type epitaxial region and implanting ions into portions of the p-type epitaxial region to render portions of the p-type epitaxial region semi-insulating. A photoresist mask or a sufficiently thick metal layer may be used as the implant mask.

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