SEMICONDUCTOR DEVICE, AND MEASUREMENT METHOD

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device capable of directly and easily measuring an electrical characteristic of an included diode, and a measurement method related to the semiconductor device.

SOLUTION: This semiconductor device includes: an n-layer 6 and a p-layer 7; a guard ring 12; a channel stopper region 14; equipotential aluminum 15; and a collector electrode 8. The channel stopper region 14 is formed on a main surface of a semiconductor substrate to be located on an outer peripheral side of the guard ring 12. The equipotential aluminum 15 is electrically connected to the channel stopper region 14. The collector electrode 8 is formed on the back face of the semiconductor substrate. The semiconductor substrate includes the p-layer 7 and the n-layer 6. The p-layer 7 is electrically connected to the collector electrode 8. The n-layer 6 directly contacts the p-layer 7 and directly contacts the channel stopper region 14. The equipotential aluminum 15 includes a channel stopper electrode 16.

COPYRIGHT: (C)2011,JPO&INPIT