| 摘要 |
PROBLEM TO BE SOLVED: To efficiently test durability of a magnetic memory cell with respect to wrong writing of data. SOLUTION: Write digit lines WDL are arranged corresponding to each row of the memory cell. The write digit line WDL, corresponding to the memory cell row including the memory cell targeted for writing data, is selectively activated, when writing the data. A multi-election circuits 320 and 330 activate more write digit lines WDL in parallel than in the case of normal data writing, by responding to the multi selection signals MSLa and MSLb when a disturbing test is carried out. COPYRIGHT: (C)2011,JPO&INPIT
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