| 摘要 |
PROBLEM TO BE SOLVED: To provide an apparatus and a method for producing a silicon carbide single crystal, producible of a single crystal with good quality. SOLUTION: A crucible 1 includes: a crucible body 5 configured to house a sublimation raw material 3, a lid 11 configured to close the opening of the crucible body 5 and provided with a mounting portion 9 configured to support a seed crystal 7; and a guide member 13 extending toward a sublimation raw material 3 side from the outer peripheral portion of the mounting portion 9. At the mounting portion side end portion located at the mounting portion 9 side in the guide member 13, a cover portion 27 configured to cover a bevel portion 35 as the outer peripheral portion of the seed crystal 7 from the sublimation raw material 3 side, is formed to be protruded from the mounting portion side end portion 21. COPYRIGHT: (C)2011,JPO&INPIT |
