发明名称 SEMICONDUCTOR ELEMENT, SEMICONDUCTOR DEVICE USING THE SAME, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor element having connection of a high lifetime reliability connection by using tin-based solder and a semiconductor device having a high lifetime reliability. SOLUTION: A semiconductor element 10 connected to a conductive member 7 by using tin-based solder 8 is provided. A silicide layer 2S, a first metal layer 3 formed of titanium, a second metal layer 4 formed of antimony, and a third metal layer 5 having nickel and/or copper are sequentially laminated on a connection surface to the conductive member 7 of a base material 1 formed of a semiconductor material from a base material 1 side. COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2011187782(A) 申请公布日期 2011.09.22
申请号 JP20100052747 申请日期 2010.03.10
申请人 MITSUBISHI ELECTRIC CORP 发明人 OTSU TAKETSUGU;MAEDA AKIRA;YAMADA AKIRA;KUROIWA TAKEHARU;TARUYA MASAYOSHI
分类号 H01L21/52;H01L21/28 主分类号 H01L21/52
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