发明名称 |
TECHNIQUES FOR PROVIDING A SEMICONDUCTOR MEMORY DEVICE |
摘要 |
<p>Techniques for providing a semiconductor memory device are disclosed. In one particular exemplary embodiment, the techniques may be realized as a semiconductor memory device including a plurality of memory cells arranged in an array of rows and columns. Each memory cell including a first region, a a second region, and a body region capacitively coupled to at least one word line and disposed between the first region and the second region. Each memory cell also including a third region, wherein the third region may be doped differently than the first region, the second region, and the body region.</p> |
申请公布号 |
WO2011115893(A2) |
申请公布日期 |
2011.09.22 |
申请号 |
WO2011US28323 |
申请日期 |
2011.03.14 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
BANNA, SRINIVASA, RAO;VAN BUSKIRK, MICHAEL, A.;THURGATE, TIMOTHY, J. |
分类号 |
H01L27/10 |
主分类号 |
H01L27/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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