| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a memory element capable of improving repetition durability, and to provide a memory device. <P>SOLUTION: A resistance change layer 22 contains aluminum oxide (AlOx) and transition metal oxide having low resistance relative to that of the aluminum oxide. Specifically, the resistance change layer 22 has a structure where a first layer 22A formed of the transition metal oxide and a second layer 22B containing the aluminum oxide as a main constituent are laminated in an order from the side of a lower electrode 10. When a positive voltage is applied to this element, voltage bias is hardly applied to the first layer 22A. Thereby, even when the element comes into a write state (low-resistance state), the first layer 22A is not reduced and the oxide film is kept formed on the lower electrode 10. Accordingly, an unnecessary oxidation reaction between a chalcogen element included in an ion source layer 21 and the lower electrode 10 is prevented from occurring with repetition of write and erasure. <P>COPYRIGHT: (C)2011,JPO&INPIT |
