| 摘要 |
PROBLEM TO BE SOLVED: To enable a simple method to substantially reduce a parasitic capacity of an output unit, and to achieve dramatically higher sensitivity than that of conventional structures. SOLUTION: A solid-state image sensing device has a space unit 15 which is formed by hollowing out an element isolation region between an FD unit 3 for extracting a signal existing at the termination portion of a charge transfer region 2 and a first stage transistor 6a of an output circuit 6 to which a contact 13 from the FD unit 3 is connected, and substantially reduced dielectric constant to approximately one-third by changing the conventional insulating film to an airspace. Therefore, parasitic capacitance between a gate electrode 11 at a portion from the FD unit 3 towards the output circuit 6 and a substrate is substantially reduced, thus significantly enhancing the sensitivity characteristics of the solid-state image sensing device 1 compared with that of conventional structures. COPYRIGHT: (C)2011,JPO&INPIT |
