发明名称 PHOTOMASK AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a photomask which suppresses the variance of an optical image due to defocusing with respect to a periodic edge pattern. <P>SOLUTION: The photomask has a periodic pattern 21A which is a pattern formed by repeatedly disposing a light shielding part 13A on a transparent substrate at a fixed pitch and is to be transferred onto a wafer by exposure with oblique incident illumination; and an SRAF part 210C which is a pattern formed by repeatedly disposing a light shielding part 130B in the periphery of the periodic pattern 21A at the same pitch as the light shielding part 13A and is to be not transferred onto a wafer by exposure with oblique incident illumination. A combination of transmittance, a phase, and a pattern width of a transmission part 120C transmitting exposure light, out of the SRAF part 210C, is adjusted so that the intensity of zero order diffracted light and the intensity of first order diffracted light which are radiated onto the wafer via the SRFA part 210C are equal to each other. <P>COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2011186312(A) 申请公布日期 2011.09.22
申请号 JP20100053218 申请日期 2010.03.10
申请人 TOSHIBA CORP 发明人 KAI YASUNOBU;MASHITA HIROMITSU
分类号 G03F1/26;G03F1/36;G03F1/54;G03F1/68;G03F1/70;H01L21/027 主分类号 G03F1/26
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