| 摘要 |
A semiconductor device includes an interlayer insulating film formed over a semiconductor substrate, a through hole formed in the interlayer insulating film, a Cu film filling the through hole, and a metal-containing base film formed on the sidewall inside the through hole and serving as a base of the Cu film. The metal-containing base film has a metal nitride layer at the interface with the Cu film in a first region including a sidewall area adjacent to the opening of the through hole. In a second region including a sidewall area nearer to the semiconductor substrate than is the first region, the metal-containing base film has a metal layer at the interface with the Cu film. The deposition rate of the Cu film on the surface of the metal layer is greater than the deposition rate of the Cu film on the surface of the metal nitride layer.
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