发明名称 PHOTOELECTRIC CONVERSION FILM-STACKED SOLID-STATE IMAGING DEVICE WITHOUT MICROLENSES, ITS MANUFACTURING METHOD, AND IMAGING APPARATUS
摘要 There are provided a semiconductor substrate; a photoelectric conversion film stacked on a layer that is disposed on the light incidence side of the semiconductor substrate; signal reading unit formed in a surface portion of the semiconductor substrate, for reading out, as shot image signals, signals corresponding to signal charge amounts detected by the photoelectric conversion film according to incident light quantities; a transparent substrate bonded to a layer that is disposed on the light incidence side of the photoelectric conversion film with a transparent resin as an adhesive; and electric connection terminals which are connected to the signal reading unit by interconnections and which penetrate through the semiconductor substrate and are exposed in a surface, located on the opposite side to the side where the photoelectric conversion film is provided, of the semiconductor substrate.
申请公布号 US2011228151(A1) 申请公布日期 2011.09.22
申请号 US201113049837 申请日期 2011.03.16
申请人 FUJIFILM CORPORATION 发明人 INOMATA HIROSHI;WATANABE EIJI
分类号 H04N5/335;H01L21/8256;H01L27/146 主分类号 H04N5/335
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