| 摘要 |
<p>A substrate attachment and detachment method can prevent fine particles from digging into the back surface of a substrate. A substrate processing device (10) comprises: an electrostatic chuck (23) that embeds an electrostatic electrode plate (22) to which a DC voltage is applied and sucks and holds a wafer (W) by an electrostatic force occurring due to the DC voltage applied to the electrostatic electrode plate (22); and a heat transfer gas supplying hole (28) through which helium gas is supplied to the heat transfer space between the sucked and held wafer (W) and the electrostatic chuck (23). When the DC voltage applied to the electrostatic electrode plate (22) is gradually increased, the pressure of helium gas supplied to the heat transfer space is increased step by step as the DC voltage increases.</p> |
