| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device and the semiconductor device, wherein characteristics of formed films are improved. SOLUTION: The method of manufacturing the semiconductor device including a step of forming films on an object to be processed by using a sputtering method includes steps of: forming a first film on the object to be processed at a first position where the object to be processed and a target do not overlap with each other in plan view with first sputtered particles sputtered in a direction crossing a principal plane of the target; and forming a second film on the first film at a second position where the object to be processed and at least a portion of the target overlap with each other in plan view with second sputtered particles sputtered in a direction substantially orthogonal to the principal surface of the target. The method of manufacturing the semiconductor device is characterized in that when the object to be processed which does not have the first film formed thereon is at the second position, the second sputtered particles are blocked. COPYRIGHT: (C)2011,JPO&INPIT
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