| 摘要 |
PROBLEM TO BE SOLVED: To solve such a problem of a conventional semiconductor device that the area of a semiconductor chip cannot be reduced sufficiently. SOLUTION: The semiconductor device has: a drain region 13 formed in a flat part of a semiconductor substrate, a source region 10 formed at the upper end of a protrusion formed on the semiconductor substrate; a control gate 12 formed in the upper layer of the flat part in a region partially overlapping the drain region 13; and a floating gate 11 formed in the region adjacent to the control gate 12 and partially covering the flat part, the wall surface of the protrusion, and the source region 10. COPYRIGHT: (C)2011,JPO&INPIT
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