| 摘要 |
PROBLEM TO BE SOLVED: To provide a wafer scanning device in which ion injection time of a wafer is reduced to improve productivity and uniformity of ion injection is improved, by not only suppressing unevenness of ion injection due to diffusion effect of the ion beams but also enabling high speed of scanning speed and high resolution of the wafer. SOLUTION: The wafer scanning device is provided with a wafer holder 2 on which the wafer W is mounted, a plurality of slide mechanisms 31, 32 to which the wafer holder 2 is connected and which are installed in multistage series so as to move the wafer holder 2 to cross the irradiation region P, and a rotating mechanism 4 which rotates the slide mechanism 31, 32 around a rotation shaft L along the X direction and adjusts irradiation anglesαof ion beams IB to the wafer W mounted on the wafer holder 2. COPYRIGHT: (C)2011,JPO&INPIT
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